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FDP150N10 N-Channel PowerTrench(R) MOSFET
July 2008
FDP150N10
100V, 57A, 15m Features
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
(R)
tm
* RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant
Application
* DC to DC convertors / Synchronous Rectification
D
G GDS
TO-220 FDP Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 57 40 228 132 7.5 110 0.88 -55 to +150 300 Units V V A A A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 1.13 0.5 62.5
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDP150N10 Rev. A
1
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP150N10 Device FDP150N10 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC= 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 49A VDS = 20V, ID = 49A
(Note 4)
2.5 -
12 156
4.5 15 -
V m S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 3580 340 140 4760 450 210 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V, ID = 49A VGS = 10V
(Note 4, 5)
VDD = 50V, ID = 49A VGS = 10V, RGEN = 25
(Note 4, 5)
47 164 86 83 53 19 15
104 338 182 176 69 -
ns ns ns ns nC nC nC
-
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 49A VGS = 0V, ISD = 49A dIF/dt = 100A/s
(Note 4)
-
41 70
57 228 1.3 -
A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 49A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP150N10 Rev. A
2
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
1000
*Notes: 1. VDS = 20V 2. 250s Pulse Test
ID,Drain Current[A]
100
ID,Drain Current[A]
100
150 C
o
10
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
10
25 C
o
-55 C
o
2 0.02
0.1 1 VDS,Drain-Source Voltage[V]
10
1 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
30
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [m], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
25
150 C
o
100
20
VGS = 10V
25 C
o
15
VGS = 20V
10
*Notes: 1. VGS = 0V
2. 250s Pulse Test
10
*Note: TC = 25 C
o
5 0 100 200 ID, Drain Current [A] 300
1 0.2
0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
5000
Ciss *Note: 1. VGS = 0V 2. f = 1MHz
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 25V VDS = 50V VDS = 80V
4000 Capacitances [pF]
8
3000
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
6
2000
Crss
4
1000
2
*Note: ID = 49A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60
FDP150N10 Rev. A
3
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance 2.0
Figure 8. On-Resistance Variation vs. Temperature
2.4
1.10
1.6
1.05
1.2
1.00
*Notes: 1. VGS = 0V 2. ID = 250uA
0.8
0.95
*Notes: 1. VGS = 10V 2. ID = 49A
0.90 -100
0.4 -100
-50 0 50 100 o 150 TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
500
Figure 10. Maximum Drain Current vs. Case Temperature
70
100
ID, Drain Current [A]
100s 1ms 10ms DC
10s
60 ID, Drain Current [A]
200
10
50 40 30 20 10 0 25
Operation in This Area is Limited by R DS(on)
1
*Notes:
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
0.01 1 10 100 VDS, Drain-Source Voltage [V]
50 75 100 o 125 TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
2
Thermal Response [ZJC]
1
0.5
0.2
PDM
0.1
0.1
0.05
t1
*Notes:
0.02 0.01 Single pulse
t2
o
1. ZJC(t) = 1.13 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDP150N10 Rev. A
4
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP150N10 Rev. A
5
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FDP150N10 Rev. A
6
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FDP150N10 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP150N10 Rev. A
7
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FDP150N10 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
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Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
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PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R)
The Power Franchise(R)
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TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM
UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status
2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP150N10 Rev. A
8
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